公开(公告)号：US20250098155A1

公开(公告)日：2025-03-20

申请号：US18742376

申请日：2024-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsung Kang ,  Hyoungyol Mun ,  Youngmin Lee

IPC: H10B12/00

Abstract: A semiconductor device includes lower electrodes on a substrate, a support pattern between the lower electrodes, an upper electrode on the lower electrodes and the support pattern, and a dielectric layer between the lower electrodes and the upper electrode, and between the support pattern and the upper electrode. The upper electrode includes a first portion on upper surfaces of the lower electrodes and a second portion on a sidewall of the support pattern. The first portion is thicker than the second portion.

公开(公告)号：US20180197815A1

公开(公告)日：2018-07-12

申请号：US15916957

申请日：2018-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsung Kang

IPC: H01L23/528 ,  H01L23/532 ,  H01L27/108

CPC classification number: H01L23/528 ,  H01L23/532 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/10808 ,  H01L27/10894 ,  H01L27/10897 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnection structure includes an underlying layer including a lower interconnection, and an interlayered dielectric layer including a contact hole and a trench therein. The contact hole exposes a portion of the lower interconnection, and the trench extends along a first direction to be connected to the contact hole. A contact plug extends through the contact hole in the interlayered dielectric layer, and an upper interconnection line extends in the trench of the interlayered dielectric layer and connects to the contact plug. The contact plug includes lower and upper sidewalls inclined at first and second angles, respectively, relative to the underlying layer, and the second angle is less than the first angle. Related devices and fabrication methods are also discussed.