公开(公告)号：US20030001111A1

公开(公告)日：2003-01-02

申请号：US10185553

申请日：2002-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Pyo Kim ,  Mun-Hee Lee

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3171 ,  H01J2237/30411

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.

Abstract translation: 公开了一种输入参数监测装置，其中用于离子注入的输入参数可以在离子注入过程期间存储在数据库中，从而允许用户从远程位置监测操作历史。 一种在半导体制造装置中监测在离子注入过程期间产生的输入参数的方法，包括收集由多个离子注入装置生成的对数数据，按照时间顺序列出数据库中收集的日志数据，并在所述处理过程中基本同时更新数据库 。 可以处理日志数据以启用文本或图形显示。 LAN将通过输入端口连接的本地计算机连接到多个ion-imp设备和远程计算机，从而使远程计算机可以监控操作过程和可能的交互。