公开(公告)号：US07683551B2

公开(公告)日：2010-03-23

申请号：US11860178

申请日：2007-09-24

Applicant: Nobuo Miyamoto

Inventor： Nobuo Miyamoto

IPC: H01J9/50

CPC classification number: H01J37/063 ,  B82Y10/00 ,  B82Y40/00 ,  H01J9/445 ,  H01J37/3174 ,  H01J2237/022 ,  H01J2237/30411

Abstract: Discharge factors existing on a surface of an electrode or an insulator forming an electron gun are removed efficiently and effectively, thus simply and easily enhancing the withstand voltage property of the electron gun. A conditioning processing device of an electron gun is provided with a voltage supply section, a voltage adjusting section for adjusting the output voltage of the voltage supply section, and a current detection section for detecting a leakage current flowing between the electrodes of the electron gun. Further, there are attached a vacuum exhaust section for adjusting the inside of the electron gun in a reduced pressure condition and a pressure detection section. Further, it is arranged that a personal computer (PC), for example, performs data processing based on the leakage current detected by the current detection section or comparison with a reference value thereof to control the voltage, which is applied between the electrodes from the voltage supply section via a connection section, via the voltage adjustment section.

Abstract translation: 有效且有效地除去存在于形成电子枪的电极或绝缘体的表面上的放电系数，从而简单且容易地提高电子枪的耐电压性。 电子枪的调理处理装置设置有电压供给部，用于调整电压供给部的输出电压的电压调整部，以及用于检测在电子枪的电极之间流动的漏电流的电流检测部。 此外，附着有用于在减压条件下调节电子枪内部的真空排气部和压力检测部。 此外，例如，个人计算机（PC）例如基于由当前检测部分检测到的泄漏电流进行数据处理或与其参考值进行比较以控制施加在电极之间的电压 电压供应部分经由连接部分，经由电压调节部分。

公开(公告)号：US20060289800A1

公开(公告)日：2006-12-28

申请号：US11386090

申请日：2006-03-22

Applicant: Adrian Murrell ,  Steven Underwood ,  Majeed Foad

Inventor： Adrian Murrell ,  Steven Underwood ,  Majeed Foad

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J2237/30411

Abstract: This invention relates to a method of implanting a substrate comprising scanning an ion beam relative to a substrate along a series of scan lines extending in a first direction, causing relative rotation between the substrate and the ion beam, scanning the ion beam along a second series of scan lines in a different direction. The implant recipe is changed during scanning in each direction such that different regions are produced during each scanning step. The regions so formed during the two scanning steps overlap such that different parts of the substrate receive different doses according to different recipes during the implantation process. The different recipes may result in different dopant concentrations, doping depths or even different dopant species.

Abstract translation: 本发明涉及一种植入衬底的方法，包括沿着沿着第一方向延伸的一系列扫描线相对于衬底扫描离子束，引起衬底和离子束之间的相对旋转，沿着第二系列扫描离子束 的扫描线在不同的方向。 在每个方向的扫描期间改变植入物配方，使得在每个扫描步骤期间产生不同的区域。 在两个扫描步骤期间形成的区域重叠，使得在植入过程期间根据不同配方接收不同剂量的基底。 不同的配方可能导致不同的掺杂剂浓度，掺杂深度或甚至不同的掺杂物种类。

公开(公告)号：US20050285539A1

公开(公告)日：2005-12-29

申请号：US11166679

申请日：2005-06-23

Applicant: Jin Park

Inventor： Jin Park

IPC: H01J37/30 ,  H01J7/24 ,  H01J37/302 ,  H01L21/425

CPC classification number: H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31701

Abstract: Disclosed herein is an ion implantation apparatus for use in manufacturing of a semiconductor device, which has a software program including an option for selecting a manipulator, enabling a time for beam tuning to be minimized. The ion implantation apparatus further includes a manipulator for extracting and focusing an ion source and an ion beam, a control block for controlling overall operation of the ion implantation apparatus and recognizing a newly installed manipulator, and a control window on which a selection menu is displayed, allowing recipe data to be selected on a screen. When installing a replacement manipulator, recipe data for the replacement manipulator can be selected to improve beam tuning set up time.

Abstract translation: 本文公开了一种用于制造半导体器件的离子注入装置，其具有包括用于选择操纵器的选项的软件程序，使得能够使波束调谐的时间最小化。 离子注入装置还包括用于提取和聚焦离子源和离子束的操纵器，用于控制离子注入装置的总体操作并识别新安装的操纵器的控制块以及显示选择菜单的控制窗口 ，允许在屏幕上选择食谱数据。 当安装更换机械手时，可以选择更换机械手的配方数据，以改善梁的调整设置时间。

公开(公告)号：US20050244989A1

公开(公告)日：2005-11-03

申请号：US11110814

申请日：2005-04-21

Applicant: Takeshi Shibata ,  Kazuhiko Tonari

Inventor： Takeshi Shibata ,  Kazuhiko Tonari

IPC: H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/336 ,  H01L21/66 ,  H01L21/84 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L21/2652 ,  H01J37/3171 ,  H01J2237/30411 ,  H01L29/1033 ,  H01L29/6659

Abstract: An ion implantation apparatus includes an ion emission unit configured to emit ions to a plurality of regions of at least one substrate under different conditions. A substrate holding unit is configured to hold the substrate and change a position of the at least one substrate relative to the ions emitted from the ion emission unit. A computation unit is configured to prepare a correcting process condition for each of the regions based on correction information beforehand input for each of the regions. The correcting process condition is acquired by correcting a standard process condition used for ion emission. A controller controls the ion emission unit and the substrate holding unit to emit the ions to each of the regions under the correcting process condition.

Abstract translation: 离子注入装置包括：离子发射单元，被配置为在不同条件下向至少一个衬底的多个区域发射离子。 衬底保持单元被配置为保持衬底并相对于从离子发射单元发射的离子改变至少一个衬底的位置。 计算单元被配置为基于针对每个区域预先输入的校正信息为每个区域准备校正处理条件。 通过校正用于离子发射的标准工艺条件来获得校正工艺条件。 控制器控制离子发射单元和衬底保持单元在校正过程条件下将离子发射到每个区域。

公开(公告)号：US20030001111A1

公开(公告)日：2003-01-02

申请号：US10185553

申请日：2002-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Pyo Kim ,  Mun-Hee Lee

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3171 ,  H01J2237/30411

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.

Abstract translation: 公开了一种输入参数监测装置，其中用于离子注入的输入参数可以在离子注入过程期间存储在数据库中，从而允许用户从远程位置监测操作历史。 一种在半导体制造装置中监测在离子注入过程期间产生的输入参数的方法，包括收集由多个离子注入装置生成的对数数据，按照时间顺序列出数据库中收集的日志数据，并在所述处理过程中基本同时更新数据库 。 可以处理日志数据以启用文本或图形显示。 LAN将通过输入端口连接的本地计算机连接到多个ion-imp设备和远程计算机，从而使远程计算机可以监控操作过程和可能的交互。

公开(公告)号：US5721687A

公开(公告)日：1998-02-24

申请号：US382345

申请日：1995-02-01

Applicant: Bruce C. Lamartine ,  Roger A. Stutz

Inventor： Bruce C. Lamartine ,  Roger A. Stutz

IPC: B23K15/00 ,  H01J37/305 ,  G06F19/00 ,  A61N5/00

CPC classification number: H01J37/3056 ,  H01J2237/30411

Abstract: An ultrahigh vacuum focused ion beam micromilling apparatus and process areisclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters.

Abstract translation: 公开了一种超高真空聚焦离子束微量注入装置和方法。 此外，公开了一种使用微型加工过程的持久数据存储介质，耐久数据存储介质能够存储例如数字或字母数字字符以及图形形状或字符。

公开(公告)号：US5051556A

公开(公告)日：1991-09-24

申请号：US429500

申请日：1989-10-31

Applicant: Kiichi Sakamoto ,  Hiroshi Yasuda ,  Akio Yamada

Inventor： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Akio Yamada

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/15 ,  H01J2237/30411 ,  H01J2237/31776

Abstract: A charged particle beam lithography system comprises a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is moved over the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask, wherein the addressing system comprises an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through selected one of the plurality of apertures except for the predetermined aperture.

Abstract translation: 带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的束形成孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交叉点 光轴，第二聚焦系统，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间，用于偏转电子束的光束偏转系统，使得光束在该光轴上移动 物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束通过掩模上的选定孔径， 其中寻址系统包括用于可变成形带电粒子束和电磁体的静电偏转器 用于偏转带电粒子束，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的选定的一个孔。

公开(公告)号：US4950910A

公开(公告)日：1990-08-21

申请号：US304242

申请日：1989-01-31

Applicant: Hiroshi Yasuda ,  Junichi Kai ,  Shinji Miyaki ,  Yasushi Takahashi

Inventor： Hiroshi Yasuda ,  Junichi Kai ,  Shinji Miyaki ,  Yasushi Takahashi

IPC: G03F9/00 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/30411 ,  H01J2237/31766 ,  H01J2237/31767

Abstract: A method for depicting a pattern on a sample having a plurality of exposure areas placed on a movable stage by irradiating an electron beam. A pattern density is calculated from data of a pattern to be exposed for every exposure area on the sample. Next, the calculated pattern density is compared with a predetermined pattern density. Then when the calculated pattern density in a first exposure area contained in said exposure pattern area is less than the predetermined pattern density, the pattern is depicted therein by a continuous stage moving process. On the other hand, when the calculated pattern density in a second exposure area contained in the exposure areas is equal or greater than the predetermined pattern density, the pattern is depicted therein by a step and repeat process.

公开(公告)号：US07414252B2

公开(公告)日：2008-08-19

申请号：US11265934

申请日：2005-11-03

Applicant: Thomas M. Moore ,  Lyudmila Zaykova-Feldman

Inventor： Thomas M. Moore ,  Lyudmila Zaykova-Feldman

IPC: G21G5/00

CPC classification number: H01J37/302 ,  B82Y15/00 ,  G01N1/32 ,  H01J37/20 ,  H01J37/22 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/204 ,  H01J2237/206 ,  H01J2237/208 ,  H01J2237/2482 ,  H01J2237/28 ,  H01J2237/30411 ,  H01J2237/30472 ,  H01J2237/31745

Abstract: An apparatus for performing automated in-situ lift-out of a sample from a specimen includes a computer having a memory with computer-readable instructions, a stage for a specimen and a nano-manipulator. The stage and the nano-manipulator are controlled by motion controllers connected to the computer. The nano-manipulator has a probe tip for attachment to samples excised from the specimen. The computer-readable instructions include instructions to cause the stage motion controllers and the nano-manipulator motion controllers, as well as an ion-beam source, to automatically perform in-situ lift-out of a sample from the specimen.

Abstract translation: 用于从样本进行样品的自动原位提取的装置包括具有具有计算机可读指令的存储器的计算机，用于样本的台和纳米操纵器。 舞台和纳米操纵器由连接到计算机的运动控制器控制。 纳米操纵器具有用于附着到从样品切除的样品的探针尖端。 计算机可读指令包括使载物台运动控制器和纳米操纵器运动控制器以及离子束源自动执行样品从样本的原位提取的指令。

公开(公告)号：US20070164237A1

公开(公告)日：2007-07-19

申请号：US11334265

申请日：2006-01-18

Applicant: David Bernhardt

Inventor： David Bernhardt

IPC: H01J37/317

CPC classification number: H01J37/3172 ,  H01J37/248 ,  H01J2237/2487 ,  H01J2237/30411

Abstract: An improved HE LINAC-based ion implantation system is disclosed utilizing direct digital synthesis (DDS) techniques to obtain precise frequency and phase control and automated electrode voltage phase calibration. The DDS controller may be used on a multi-stage linear accelerator based implanter to digitally synchronize the frequency and phase of the electric fields to each electrode within each stage of the accelerator. The DDS controller includes digital phase synthesis (DPS) circuits for modulating the phase of the electric field to the electrodes, and a master oscillator that uses digital frequency synthesis or DFS to digitally synthesize a master frequency and phase applied to each of the DPS circuits. Also disclosed are methods for automatically phase and amplitude calibrating the RF electrode voltages of the stages.

Abstract translation: 公开了一种改进的基于HE LINAC的离子注入系统，其利用直接数字合成（DDS）技术来获得精确的频率和相位控制以及自动电极电压相位校准。 DDS控制器可以用在基于多级线性加速器的注入器上，以将加速器的每个阶段内的电场的频率和相位数字地同步到每个电极。 DDS控制器包括用于调制电极相位的数字相位合成（DPS）电路，以及使用数字频率合成或DFS的主振荡器来数字地合成施加到每个DPS电路的主频率和相位。 还公开了用于自动相位和幅度校准级的RF电极电压的方法。