公开(公告)号：US08446766B2

公开(公告)日：2013-05-21

申请号：US13628244

申请日：2012-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Tae Park ,  Myoung Gon Kang

IPC: G11C16/04 ,  G11C16/06 ,  G06F13/00

CPC classification number: G11C16/349 ,  G11C16/10 ,  G11C16/3495

Abstract: A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.

Abstract translation: 非易失性存储器件包括存储单元阵列，该存储单元阵列包括分成多个区域的多个存储块，以及控制逻辑元件。 控制逻辑部件基于存储器块的编程/擦除周期来选择要编程的存储器块，并且选择用于对所选存储器块的区域进行编程的程序规则。