公开(公告)号：US20150155140A1

公开(公告)日：2015-06-04

申请号：US14543897

申请日：2014-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-hee Lee ,  Su-ho Lee ,  Won-hyuk Jang ,  Jae-beom Park ,  Ik-soo Kim ,  Myoung-woon Kim

IPC: H01J37/32 ,  H01J37/20 ,  H01L21/67

CPC classification number: H01J37/3288 ,  H01J37/32577 ,  H01J37/32908

Abstract: A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the chamber and a second electrode opposing to the first electrode, and a first power transmitting rod connected to one of the first electrode and the second electrode. A conductive stress attenuating unit may be formed in the first power transmitting rod. Methods of manufacturing semiconductor devices using the semiconductor manufacturing apparatus are also disclosed.

Abstract translation: 半导体制造装置可以包括容纳要处理的基板的腔室，在腔室中提供电场的第一电极和与第一电极相对的第二电极，以及连接到第一电极和第二电极之一的第一电力传输杆 电极。 可以在第一动力传递杆中形成导电应力衰减单元。 还公开了使用半导体制造装置制造半导体器件的方法。

公开(公告)号：US09564298B2

公开(公告)日：2017-02-07

申请号：US14543897

申请日：2014-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-hee Lee ,  Su-ho Lee ,  Won-hyuk Jang ,  Jae-beom Park ,  Ik-soo Kim ,  Myoung-woon Kim

IPC: H01J37/32

CPC classification number: H01J37/3288 ,  H01J37/32577 ,  H01J37/32908

Abstract: A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the chamber and a second electrode opposing to the first electrode, and a first power transmitting rod connected to one of the first electrode and the second electrode. A conductive stress attenuating unit may be formed in the first power transmitting rod. Methods of manufacturing semiconductor devices using the semiconductor manufacturing apparatus are also disclosed.

Abstract translation: 半导体制造装置可以包括容纳要处理的基板的腔室，在腔室中提供电场的第一电极和与第一电极相对的第二电极，以及连接到第一电极和第二电极之一的第一电力传输杆 电极。 可以在第一动力传递杆中形成导电应力衰减单元。 还公开了使用半导体制造装置制造半导体器件的方法。