公开(公告)号：US20220190131A1

公开(公告)日：2022-06-16

申请号：US17409681

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Min KO ,  Myung Hun LEE ,  Pan Suk KWAK ,  Dae Seok BYEON

IPC: H01L29/423 ,  H01L27/11519 ,  H01L27/11529 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L23/528 ,  H01L23/522

Abstract: A nonvolatile memory device includes a peripheral logic structure including a peripheral circuit on a substrate, a horizontal semiconductor layer extending along an upper surface of the peripheral logic structure, stacked structures arranged in a first direction on the horizontal semiconductor layer and including interlayer insulating films and conductive films alternately stacked in a direction perpendicular to the substrate, a first opening disposed between the stacked structures and included in the horizontal semiconductor layer to expose a part of the peripheral logic structure and a second opening arranged in a second direction, which differs from the first direction, from the first opening, included in the horizontal semiconductor layer, and disposed adjacent to the first opening. The peripheral logic structure includes a control transistor overlapping the second opening in a plan view and controlling operation of the plurality of stacked structures.