公开(公告)号：US10446525B2

公开(公告)日：2019-10-15

申请号：US16050341

申请日：2018-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-won Choi ,  Won-keun Kim ,  Myung-sung Kang ,  Gwang-sun Seo

IPC: H01L23/52 ,  H01L25/065 ,  H01L21/56

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

公开(公告)号：US10043780B2

公开(公告)日：2018-08-07

申请号：US15435286

申请日：2017-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-won Choi ,  Won-keun Kim ,  Myung-sung Kang ,  Gwang-sun Seo

IPC: H01L29/40 ,  H01L25/065

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.