公开(公告)号：US10043780B2

公开(公告)日：2018-08-07

申请号：US15435286

申请日：2017-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-won Choi ,  Won-keun Kim ,  Myung-sung Kang ,  Gwang-sun Seo

IPC: H01L29/40 ,  H01L25/065

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

公开(公告)号：US20150102485A1

公开(公告)日：2015-04-16

申请号：US14288997

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Un-byoung Kang ,  Kyung-wook Paik ,  Tae-Je Cho ,  Young-kun Jee ,  Sun-kyoung Seo ,  Yong-won Choi ,  Ji-won Shin

IPC: H01L23/29 ,  H01L23/538 ,  C08K3/08 ,  H01L23/50

CPC classification number: C08K3/08 ,  C08K2003/0893 ,  C08K2201/011 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16503 ,  H01L2224/17181 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29318 ,  H01L2224/32505 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/8211

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Abstract translation: 公开了一种选自非导电膜和非导电聚合物浆料并含有锌（Zn）颗粒的分散体的非导电材料层以及包括非导电材料层的半导体封装。 非导电材料层在薄膜型非导电性聚合物基材中含有平均粒径为约1nm〜约200nm的锌（Zn）颗粒，半导体封装包括非导电膜。 通过使用含有锌分散体的非导电性膜和/或非导电性糊剂，可以以低制造成本通过简单的工艺制造具有优异的电连接性能和高可靠性的半导体封装。

公开(公告)号：US10446525B2

公开(公告)日：2019-10-15

申请号：US16050341

申请日：2018-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-won Choi ,  Won-keun Kim ,  Myung-sung Kang ,  Gwang-sun Seo

IPC: H01L23/52 ,  H01L25/065 ,  H01L21/56

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

公开(公告)号：US09376541B2

公开(公告)日：2016-06-28

申请号：US14288997

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Un-byoung Kang ,  Kyung-wook Paik ,  Tae-Je Cho ,  Young-kun Jee ,  Sun-kyoung Seo ,  Yong-won Choi ,  Ji-won Shin

IPC: H01L23/29 ,  C08K3/08 ,  H01L25/065 ,  H01L23/00

CPC classification number: C08K3/08 ,  C08K2003/0893 ,  C08K2201/011 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16503 ,  H01L2224/17181 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29318 ,  H01L2224/32505 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/8211

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Abstract translation: 公开了一种选自非导电膜和非导电聚合物浆料并含有锌（Zn）颗粒的分散体的非导电材料层以及包括非导电材料层的半导体封装。 非导电材料层在薄膜型非导电性聚合物基材中含有平均粒径为约1nm〜约200nm的锌（Zn）颗粒，半导体封装包括非导电膜。 通过使用含有锌分散体的非导电性膜和/或非导电性糊剂，可以以低制造成本通过简单的工艺制造具有优异的电连接性能和高可靠性的半导体封装。