公开(公告)号：US20190189540A1

公开(公告)日：2019-06-20

申请号：US16282682

申请日：2019-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Nam Kim ,  Tsukasa MATSUDA ,  Rak-Hwan KIM ,  Byung-Hee KIM ,  Nae-In LEE ,  Jong-Jin LEE

IPC: H01L23/485 ,  H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

公开(公告)号：US20170133317A1

公开(公告)日：2017-05-11

申请号：US15298855

申请日：2016-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rak-Hwan KIM ,  Byung-Hee Kim ,  Jin-Nam Kim ,  Jong-Min Baek ,  Nae-In Lee ,  Eun-Ji Jung

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/76847 ,  H01L21/76877 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film, a first trench having a first width, and a second trench having a second width, the second trench including an upper portion and a lower portion, the second width being greater than the first width, a first wire substantially filling the first trench and including a first metal, and a second wire substantially filling the second trench and including a lower wire and an upper wire, the lower wire substantially filling a lower portion of the second trench and including the first metal, and the upper wire substantially filling an upper portion of the second trench and including a second metal different from the first metal.