公开(公告)号：US12080648B2

公开(公告)日：2024-09-03

申请号：US17517472

申请日：2021-11-02

申请人： Intel Corporation

发明人： Yang Cao ,  Akm Shaestagir Chowdhury ,  Jeff Grunes

IPC分类号： H01L23/532 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L23/53261 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/53209 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.

公开(公告)号：US20230307367A1

公开(公告)日：2023-09-28

申请号：US18143027

申请日：2023-05-03

申请人： Micron Technology, Inc.

发明人： Santanu Sarkar

IPC分类号： H01L23/532 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L23/53276 ,  H01L23/5329 ,  H01L23/53261 ,  H01L29/1606 ,  H01L29/66015

摘要： Some embodiments include an integrated assembly having a first graphene-containing-material offset from a second graphene-containing-material. The first graphene-containing-material includes a first graphene-layer-stack with first metal interspersed therein. The second graphene-containing-material includes a second graphene-layer-stack with second metal interspersed therein. A conductive interconnect couples the first and second graphene-containing materials to one another.

公开(公告)号：US11705399B2

公开(公告)日：2023-07-18

申请号：US17851313

申请日：2022-06-28

申请人： ROHM CO., LTD.

发明人： Hideaki Yanagida ,  Yoshihisa Takada

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L23/00

CPC分类号： H01L23/5283 ,  H01L23/53233 ,  H01L23/53261 ,  H01L24/20

摘要： There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

公开(公告)号：US20180366369A1

公开(公告)日：2018-12-20

申请号：US15623481

申请日：2017-06-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Cheng-Han LIN ,  Han-Sheng WENG ,  Chao-Ching CHANG ,  Jian-Shin TSAI ,  Yi-Ming LIN ,  Min-Hui LIN

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L23/48 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53295 ,  H01L23/535

摘要： A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

公开(公告)号：US10037996B2

公开(公告)日：2018-07-31

申请号：US15646380

申请日：2017-07-11

申请人： Samsung Electronics Co., Ltd.

发明人： Daeik Kim ,  Bong-Soo Kim ,  Jemin Park ,  Yoosang Hwang

IPC分类号： H01L27/00 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/762 ,  H01L23/528 ,  H01L29/06 ,  H01L21/266 ,  H01L21/3213 ,  H01L23/532

CPC分类号： H01L27/10814 ,  H01L21/266 ,  H01L21/3205 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/76224 ,  H01L23/5283 ,  H01L23/53257 ,  H01L23/53261 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/0649

摘要： A semiconductor device includes a substrate, a bit line structure on the substrate, a first contact structure on a sidewall of the bit line structure, a second contact structure on the bit line structure and spaced apart from the first contact structure across the bit line structure, and an insulation pattern between the bit line structure and the first contact structure. The second contact structure covers at least a portion of a top surface of the bit line structure. The insulation pattern comprises a protrusion that protrudes from a sidewall of the insulation pattern that immediately adjacent to the bit line structure. The protrusion protrudes in a first direction parallel to a top surface of the substrate.

公开(公告)号：US09997460B2

公开(公告)日：2018-06-12

申请号：US15413356

申请日：2017-01-23

申请人： International Business Machines Corporation

发明人： Daniel C Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/48 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC分类号： H01L23/53266 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53261

摘要： An advanced metal conductor structure is described. An integrated circuit device including a substrate with a patterned dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer disposed over the set of features in the patterned dielectric and a ruthenium layer is disposed over the adhesion promoting layer. A cobalt layer is disposed over the ruthenium layer filling the set of features, wherein the cobalt layer is formed using a physical vapor deposition process.

公开(公告)号：US20180053728A1

公开(公告)日：2018-02-22

申请号：US15413356

申请日：2017-01-23

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC分类号： H01L23/53266 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53261

摘要： An advanced metal conductor structure is described. An integrated circuit device including a substrate with a patterned dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer disposed over the set of features in the patterned dielectric and a ruthenium layer is disposed over the adhesion promoting layer. A cobalt layer is disposed over the ruthenium layer filling the set of features, wherein the cobalt layer is formed using a physical vapor deposition process.

公开(公告)号：US20180053725A1

公开(公告)日：2018-02-22

申请号：US15239198

申请日：2016-08-17

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L23/528 ,  H01L23/522 ,  H01L21/321

CPC分类号： H01L23/53238 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266

摘要： A pattern is provided in a dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. The set of features have a first dimension. An adhesion promoting layer disposed over the patterned dielectric is deposited. A ruthenium layer disposed over the adhesion promoting layer is deposited. A cobalt layer is deposited over the ruthenium layer. A high temperature thermal anneal is performed which creates a ruthenium cobalt alloy layer to cover surfaces of the set of features. A metal layer is deposited disposed over the ruthenium cobalt alloy layer to form a set of metal conductor structures. In another aspect of the invention, a device is created using the method.

公开(公告)号：US09859215B1

公开(公告)日：2018-01-02

申请号：US15239009

申请日：2016-08-17

申请人： International Business Machines Corporation

发明人： Daniel C Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/52 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/53266 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53261

摘要： A method for fabricating an advanced metal conductor structure is described. A pattern in a dielectric layer is provided. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is created over the patterned dielectric. A ruthenium layer is deposited over the adhesion promoting layer. Using a physical vapor deposition process, a cobalt layer is deposited over the ruthenium layer. A thermal anneal is performed which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures. In another aspect of the invention, an integrated circuit device is formed using the method.

公开(公告)号：US09748181B1

公开(公告)日：2017-08-29

申请号：US15168479

申请日：2016-05-31

申请人： Texas Instruments Incorporated

发明人： Ricky Alan Jackson ,  Sudtida Lavangkul ,  Erika Lynn Mazotti

IPC分类号： H01L23/544 ,  H01L23/00 ,  H01L21/78 ,  H01L23/31 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L23/562 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/585

摘要： An example apparatus includes a plurality of scribe streets arranged in rows and columns on the surface of a semiconductor wafer; and a plurality of integrated circuit dies arranged in rows and columns and spaced apart by the scribe streets. Each integrated circuit die includes plurality of active areas; a plurality of insulator layers overlying the active areas; a plurality of conductor layers interspersed with and separated by ones of the insulator layers; and a passivation layer overlying a top portion of the uppermost one of the conductor layers. A scribe seal in a scribe region surrounds the periphery of the integrated circuit dies, the scribe seal covered by the passivation layer; and a crack arrest structure is located surrounding and spaced from the scribe seal, and including an opening in the passivation layer that extends to and exposes the upper surface of the crack arrest structure. Methods are disclosed.