公开(公告)号：US20250024682A1

公开(公告)日：2025-01-16

申请号：US18626466

申请日：2024-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rokgyeong Kim ,  Myunghun Lee

IPC: H10B43/40 ,  G11C16/08 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A semiconductor device may include a peripheral circuit region including a plurality of elements on a substrate, the plurality of elements providing a page buffer and a row decoder, wherein the peripheral circuit region includes a first well region and a second well region, and at least one of a conductivity-type of impurities or a doping concentration of the first well region is different from that of the second well region, wherein the row decoder includes at least one first element in the first well region, and at least one second element in the second well region, wherein the first well region and the second well region are configured to have a same body bias voltage, and wherein the first well region is in contact with the second well region in a second direction parallel to an upper surface of the substrate.