公开(公告)号：US20250035563A1

公开(公告)日：2025-01-30

申请号：US18764677

申请日：2024-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryuju Sato ,  INGI KIM

IPC: G01N21/95 ,  G01N21/88

Abstract: A semiconductor measurement device includes a laser light source generating a fundamental wave having a first wavelength, an objective lens focusing the fundamental wave on a sample surface of a sample, a wavelength filter blocking reflected light corresponding to the fundamental wave that is reflected from the sample surface and transmitting signal light generated by irradiating the fundamental wave to the sample surface, and a first detection unit detecting the signal light passing through the wavelength filter. The first detection unit is located to detect the signal light generated from the sample surface and measures an intensity distribution of the signal light emitted in two or more different emission directions from the sample surface of the sample placed at a fixed position. The signal light includes nonlinear light generated from the sample surface irradiated by the fundamental wave and having a second wavelength which is different from the first wavelength.