APPARATUS FOR INSPECTING SURFACE OF OBJECT
    1.
    发明公开

    公开(公告)号:US20240183796A1

    公开(公告)日:2024-06-06

    申请号:US18385480

    申请日:2023-10-31

    Abstract: In semiconductor inspection using second-harmonic generation within an object, a weak second-harmonic is detected at high sensitivity. In a semiconductor inspecting apparatus which irradiates a pulsed laser with a very short pulse width to a surface of a semiconductor device as the object, and measures the second-harmonic generated within the semiconductor device, a second-harmonic generation element is disposed between a light source and the object to generate a first second-harmonic. Further, the apparatus modulates a phase of only the first second-harmonic using an electric optical crystal, and then, a fundamental wave is irradiated onto the object. When the fundamental wave is irradiated onto the semiconductor device, the second-harmonic is generated therefrom. The first second-harmonic interferes with the second second-harmonic on a detector, and an intensity of the light obtained by the interfering is modulated at the same period as that of the phase modulation of the first second-harmonic. An amplitude of the second second-harmonic may be obtained from a modulated amplitude thereof, and a phase of the second second-harmonic may be measured from a modulated phase thereof.

    SEMICONDUCTOR MEASUREMENT DEVICE
    5.
    发明申请

    公开(公告)号:US20250035563A1

    公开(公告)日:2025-01-30

    申请号:US18764677

    申请日:2024-07-05

    Inventor: Ryuju Sato INGI KIM

    Abstract: A semiconductor measurement device includes a laser light source generating a fundamental wave having a first wavelength, an objective lens focusing the fundamental wave on a sample surface of a sample, a wavelength filter blocking reflected light corresponding to the fundamental wave that is reflected from the sample surface and transmitting signal light generated by irradiating the fundamental wave to the sample surface, and a first detection unit detecting the signal light passing through the wavelength filter. The first detection unit is located to detect the signal light generated from the sample surface and measures an intensity distribution of the signal light emitted in two or more different emission directions from the sample surface of the sample placed at a fixed position. The signal light includes nonlinear light generated from the sample surface irradiated by the fundamental wave and having a second wavelength which is different from the first wavelength.

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