公开(公告)号：US20190355822A1

公开(公告)日：2019-11-21

申请号：US16275675

申请日：2019-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNG CHAI JUNG ,  MYUNG GIL KANG ,  KANG ILL SEO ,  SEON BAE KIM ,  YONG HEE PARK

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L23/522

Abstract: VFET devices are provided. A VFET device includes a substrate including first and second protruding portions. The VFET device includes an isolation region between the first and second protruding portions. The VFET device includes first and second silicide regions on the first and second protruding portions, respectively. Moreover, the VFET device includes a contact on the first and second silicide regions. Related methods of forming a VFET device are also provided.