EQUIPMENT, APPARATUS AND METHOD OF CHEMICAL MECHANICAL POLISHING (CMP)

    公开(公告)号:US20240227112A1

    公开(公告)日:2024-07-11

    申请号:US18225909

    申请日:2023-07-25

    CPC classification number: B24B37/013

    Abstract: A chemical mechanical polishing apparatus according to an example embodiment includes a polishing platen; a polishing pad which is located on the polishing platen and includes a polishing surface; a slurry supplier configured to supply a slurry to the polishing pad; a polishing head which is located above the polishing pad and configured to mount a wafer thereon; and an additional CMP process condition generator which generates an additional chemical mechanical polishing (CMP) process condition according to a type of residue when there is a residue on a wafer after a CMP process is performed on the wafer.

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