公开(公告)号：US20230064496A1

公开(公告)日：2023-03-02

申请号：US17688198

申请日：2022-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGKEUN YOON ,  Hyunsoo KIM ,  Sang Joon KIM

IPC: G11C13/00 ,  H01L27/24 ,  G06F17/14 ,  G06G7/16 ,  G06F17/16 ,  G10L19/00

Abstract: A memristor crossbar array (MCA) circuit includes an input processor configured to receive an input signal corresponding to a predetermined number of input values and to apply the input signal to memristors arranged along input lines, an MCA including the memristors having resistance values based on at least one transformation matrix including binary element values, and an outputter configured to output a frequency component intensity of the input signal based on a signal that is output from each of output lines on which the memristors are arranged, in response to the input signal being applied to the memristors.