公开(公告)号：US20180130786A1

公开(公告)日：2018-05-10

申请号：US15635615

申请日：2017-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHARMA DEEPAK ,  RAJEEV RANJAN ,  KUCHANURI SUBHASH ,  CHULHONG PARK ,  JAESEOK YANG ,  KWANYOUNG CHUN

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L27/0207 ,  H01L21/823475 ,  H01L27/088 ,  H01L27/092 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a first active pattern extending in a first direction on a first region and a second region of a substrate, a first dummy gate electrode extending in a second direction crossing the first active pattern between the first region and the second region, a contact structure contacting the first dummy gate electrode and extending in the first direction, and a power line disposed on the contact structure and electrically connected to the contact structure. The power line extends in the first direction. The contact structure overlaps with the power line when viewed in a plan view.