公开(公告)号：US20190115344A1

公开(公告)日：2019-04-18

申请号：US16211851

申请日：2018-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  SUG-HYUN SUNG

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/7854

Abstract: Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a second trench formed directly adjacent the first trench having a second depth that is greater than the first depth, a field insulation layer filling a portion of the first trench and a portion of the second trench, and a protrusion structure protruding from a bottom of the first trench and being lower than a surface of the field insulation layer.