公开(公告)号：US20210175225A1

公开(公告)日：2021-06-10

申请号：US16921846

申请日：2020-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUKJIN KIM ,  MIJIN LEE ,  NAMHO KIM ,  CHANHEE JEON

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes first well regions in a substrate and spaced apart from each other, a connection doped region between the first well regions, and a first interconnection line electrically connected to the connection doped region through a first contact. The first well regions and the connection doped region include impurities of a first conductivity type, and a concentration of the impurities in the connection doped region is higher than that in the first well regions. The first well regions extend into the substrate to a depth larger than that of the connection doped region. A first portion of the connection doped region is disposed in the first well regions and a second portion of the connection doped region contacts the substrate.