公开(公告)号：US20210175225A1

公开(公告)日：2021-06-10

申请号：US16921846

申请日：2020-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUKJIN KIM ,  MIJIN LEE ,  NAMHO KIM ,  CHANHEE JEON

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes first well regions in a substrate and spaced apart from each other, a connection doped region between the first well regions, and a first interconnection line electrically connected to the connection doped region through a first contact. The first well regions and the connection doped region include impurities of a first conductivity type, and a concentration of the impurities in the connection doped region is higher than that in the first well regions. The first well regions extend into the substrate to a depth larger than that of the connection doped region. A first portion of the connection doped region is disposed in the first well regions and a second portion of the connection doped region contacts the substrate.

公开(公告)号：US20240312985A1

公开(公告)日：2024-09-19

申请号：US18515524

申请日：2023-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGKYU SONG ,  JIN HEO ,  Minho KIM ,  Jooyoung SONG ,  EUNSUK LEE ,  CHANHEE JEON

IPC: H01L27/06 ,  H01L27/08

CPC classification number: H01L27/067 ,  H01L27/0817

Abstract: Disclosed is an electrostatic discharge protection device which includes a substrate including a first well having a first conductivity type and a second well surrounding the first well, first to fifth diffusion regions formed on the first well, and sixth and seventh diffusion regions formed on the second well. The second diffusion region surrounds the first diffusion region, the fourth diffusion region surrounds the fifth diffusion region, and the fifth diffusion region surrounds the second diffusion region and the fourth diffusion region. The sixth diffusion region surrounds the fifth diffusion region, and the seventh diffusion region surrounds the sixth diffusion region. The sixth and seventh diffusion regions are connected to an anode electrode, and the first to fifth diffusion regions are connected a cathode electrode.

公开(公告)号：US20240105711A1

公开(公告)日：2024-03-28

申请号：US18361892

申请日：2023-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGKYU SONG ,  Minho KIM ,  JIN HEO ,  Kyoungil DO ,  Jooyoung SONG ,  CHANHEE JEON

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L27/0292 ,  H02H9/046

Abstract: An electro-static discharge protection device includes a substrate that includes a first well that has a first conductive type and a second well that has a second conductive type, and first to eighth diffusion regions formed on the first well and the second well. At least a portion of the diffusion regions formed in the first well are connected to a first electrode, and at least a portion of diffusion regions formed in a second well are connected to a second electrode. The contact between one of diffusion regions formed in the first well and an N well forms a trigger diode. A junction between one of diffusion regions formed in a second well and a P well forms a trigger diode. The trigger diodes are electrically connected to each other.