公开(公告)号：US20140306293A1

公开(公告)日：2014-10-16

申请号：US14186134

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hum BAEK ,  Hyuckjoon KWON

IPC: H01L29/06 ,  H01L27/088

CPC classification number: H01L27/088 ,  H01L27/0207 ,  H01L27/0921

Abstract: The semiconductor memory device including a first sense amplifier region including first metal-oxide-semiconductor (MOS) transistors disposed in a well on a semiconductor substrate, a second sense amplifier region adjacent to the well and including second MOS transistors disposed on the semiconductor substrate, a guard band having a bar type structure and provided between the first MOS transistors in the well, and a guard ring partially or fully enclosing the second sense amplifier region in the semiconductor substrate may be provided.

Abstract translation: 该半导体存储器件包括：第一读出放大器区域，包括设置在半导体衬底上的阱中的第一金属氧化物半导体（MOS）晶体管;与该阱相邻的第二读出放大器区域，并且包括设置在半导体衬底上的第二MOS晶体管; 可以提供具有条形结构并设置在阱中的第一MOS晶体管之间的保护带和部分或全部包围半导体衬底中的第二读出放大器区的保护环。