公开(公告)号：US20240194269A1

公开(公告)日：2024-06-13

申请号：US18517429

申请日：2023-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungsoo KIM ,  Yohan LEE ,  Hyunggon KIM ,  Sang Soo PARK ,  Bongsoon LIM ,  Jin-Young CHUN

IPC: G11C16/16 ,  G11C16/04

CPC classification number: G11C16/16 ,  G11C16/0483

Abstract: A memory device includes a memory cell array having a plurality of memory blocks therein, including a target memory block. A voltage generator is provided, which is configured to generate an erase voltage and row line voltages, which are provided to the target memory block upon which an erase operation is to be performed. Control logic is provided, which is configured to control the memory cell array and the voltage generator. In addition, during operation, the erase voltage is provided to at least one of a bitline or a common source line associated with the target memory block, and a gate line of a transistor provided with the erase voltage is precharged before the erase voltage is provided to the at least one of the bitline or the common source line of the target memory block.

公开(公告)号：US20250157505A1

公开(公告)日：2025-05-15

申请号：US18825025

申请日：2024-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yo Han LEE ,  Sang Soo PARK ,  Jung-Yun YUN ,  Jae-Yun LEE

IPC: G11C7/10 ,  G11C29/52

Abstract: A nonvolatile memory device includes a memory cell array configured to store first and second setting data, a page buffer circuit configured to store data of the memory cell array, and a control logic circuit. The control logic circuit is configured to control a sensing operation based on setting data stored in a setting buffer, perform first sensing of the first setting data stored in the memory cell array in a first sensing scheme, and store the sensed first setting data in the page buffer circuit, dump down the first setting data stored in the page buffer circuit into the setting buffer, and perform second sensing of the second setting data stored in the memory cell array in a second sensing scheme based on the first setting data dumped down into the setting buffer, and store the sensed second setting data in the page buffer circuit.