公开(公告)号：US11430824B2

公开(公告)日：2022-08-30

申请号：US16839173

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L23/48 ,  H01L27/146

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

公开(公告)号：US20200235156A1

公开(公告)日：2020-07-23

申请号：US16839173

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L27/146

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

公开(公告)号：US20170040373A1

公开(公告)日：2017-02-09

申请号：US15227509

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

Abstract translation: 集成电路（IC）装置包括在第一基板的前表面上的第一基板和第一结构。 第一结构包括第一层间绝缘层结构，其包括在第一层间绝缘层结构的不同水平处彼此间隔开的多个第一导电焊盘层。 IC器件包括在第一衬底上的第二衬底和面对第一衬底的前表面的第二衬底的前表面上的第二结构。 第二结构包括结合到第一层间绝缘层结构的第二层间绝缘层结构。 贯穿硅通孔（TSV）结构穿透第二衬底和第二层间绝缘层结构。 TSV结构与位于不同级别的多个第一导电焊盘层的至少两个第一导电焊盘层接触。