公开(公告)号：US09070729B2

公开(公告)日：2015-06-30

申请号：US14497382

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-wook Ji ,  Hyoung-yol Mun ,  Yeong-Iyeol Park ,  Tae-je Cho

IPC: H01L21/683 ,  H01L21/304 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/6835 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/304 ,  H01L21/6836 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/54493 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

Abstract translation: 一种晶片处理方法，通过该晶圆处理方法，可以将器件晶片对准并结合到载体晶片以对器件晶片进行背面磨削处理，并且可以在执行背面磨削工艺之后与载体晶片分离，并且制造 提供了使用晶片处理方法的半导体器件。 晶片处理方法包括：将第一磁性材料设置在晶片的前侧，并在载体晶片上设置第二磁性材料，其中第一磁性材料的表面和第二磁性材料的表面彼此面对 ，具有相反的极性; 通过第一磁性材料和第二磁性材料之间的磁吸引将晶片对准和结合到载体晶片; 研磨晶片的背面以使晶片变薄; 以及将晶片与载体晶片分离。

公开(公告)号：US20150093880A1

公开(公告)日：2015-04-02

申请号：US14497382

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-wook Ji ,  Hyoung-yol Mun ,  Yeong-Iyeol Park ,  Tae-je Cho

IPC: H01L21/683 ,  H01L21/768 ,  H01L21/304

CPC classification number: H01L21/6835 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/304 ,  H01L21/6836 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/54493 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

Abstract translation: 一种晶片处理方法，通过该晶圆处理方法，可以将器件晶片对准并结合到载体晶片以对器件晶片进行背面磨削处理，并且可以在执行背面磨削工艺之后与载体晶片分离，并且制造 提供了使用晶片处理方法的半导体器件。 晶片处理方法包括：将第一磁性材料设置在晶片的前侧，并将第二磁性材料设置在载体晶片上，其中第一磁性材料的表面和第二磁性材料的表面彼此面对 ，具有相反的极性; 通过第一磁性材料和第二磁性材料之间的磁吸引将晶片对准和结合到载体晶片; 研磨晶片的背面以使晶片变薄; 以及将晶片与载体晶片分离。