公开(公告)号：US20240395615A1

公开(公告)日：2024-11-28

申请号：US18631548

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokwon Kim ,  Bongjin Kuh ,  Sukhoon Kim ,  Jiho Park ,  Sanghyeok Yu ,  Yongho Ha ,  Musarrat Hasan

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/505

Abstract: A method of manufacturing a semiconductor device includes forming a substrate including a structure having a first region and a contact hole exposing the first region, loading the substrate into a process chamber, repeatedly performing two or more times, a deposition process that includes repeatedly applying radio frequency (RF) plasma power to a process gas for a first time duration and not applying the RF plasma power to the process gas for a second time duration, and a soak process that does not use plasma, at a metal-semiconductor compound formation temperature or higher, within the process chamber, and thereby forming a metal-semiconductor compound layer on the first region, a sidewall material layer on a sidewall of the contact hole, and an upper material layer on the structure, performing a removal process of removing at least a portion of the sidewall material layer in the process chamber, and unloading the substrate from the process chamber after performing the removal process.