公开(公告)号：US08815687B2

公开(公告)日：2014-08-26

申请号：US14057079

申请日：2013-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul Park ,  Sangsup Jeong ,  Byung-Jin Kang

IPC: H01L21/336

CPC classification number: H01L27/10897 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10888

Abstract: Provided are methods of manufacturing semiconductor devices. The method of manufacturing the semiconductor device may include forming a transistor on a substrate, the transistor having first and second doped regions, forming an interlayer dielectric on the substrate, forming a contact hole exposing the first doped region of the transistor, forming a spacer disposed on an inner sidewall of the contact hole, and filling the contact hole provided with the spacer with a conductive layer to form a contact plug.

Abstract translation: 提供制造半导体器件的方法。 制造半导体器件的方法可以包括在衬底上形成晶体管，晶体管具有第一和第二掺杂区域，在衬底上形成层间电介质，形成暴露晶体管的第一掺杂区的接触孔，形成间隔物 在接触孔的内侧壁上，并且将设置有间隔物的接触孔填充导电层以形成接触插塞。