公开(公告)号：US10658230B2

公开(公告)日：2020-05-19

申请号：US16410268

申请日：2019-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chung-Il Hyun ,  Semee Jang ,  Sung Yun Lee

IPC: H01L21/768 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582 ,  H01L23/522

Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.