公开(公告)号：US20230378315A1

公开(公告)日：2023-11-23

申请号：US18060037

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsoo Kim ,  Seongheon Woo ,  Youngchan Lee ,  Jungmin Hyun

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L29/66492 ,  H01L21/26586 ,  H01L21/266

Abstract: A manufacturing method of a semiconductor device including forming a photoresist pattern on a semiconductor substrate on which a gate electrode has been formed, forming a well region using both the photoresist pattern and the gate electrode as a mask, forming a lightly doped drain (LDD) region in the well region, using both the photoresist pattern and the gate electrode as a mask, reducing a thickness of the photoresist pattern by removing a portion of the photoresist pattern, forming a halo region below the LDD region using both the photoresist pattern and the gate electrode as a mask, and removing the photoresist pattern.