公开(公告)号：US20210249090A1

公开(公告)日：2021-08-12

申请号：US17242712

申请日：2021-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seul Bee LEE ,  Dong Hun KWAK ,  Jong-Chul PARK

IPC: G11C16/34 ,  G11C16/08

Abstract: A nonvolatile memory device is provided. A nonvolatile memory device comprises a word line, a bit line, a memory cell array including a first memory cell at an intersection region between the word line and the bit line, a word line voltage generating circuitry configured to generate a program voltage, the program voltage to be provided to the word line, a row decoder circuitry configured to receive the program voltage from the word line voltage generating circuitry and configured to provide the program voltage to the word line, a verification circuitry configured to generate a verification signal in response to verifying a success or a failure of programming of the first memory cell, and a control circuitry configured to apply the program voltage to the first memory cell in response to the verification signal, and configured to cut off the program voltage in response to the verification signal.