公开(公告)号：US20220165765A1

公开(公告)日：2022-05-26

申请号：US17373924

申请日：2021-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Sub JUNG ,  Seung Ki BAEK ,  Kyung Ho LEE

IPC: H01L27/146 ,  H04N9/04

Abstract: An image sensor includes a first element separation film inside a substrate and having a mesh shape, pixel regions on the substrate defined by the first element separation film and including at least first and second pixel regions, and a second element separation film inside the substrate and partitioning the first pixel region into sub-pixel regions, the second element separation film not being in the second pixel region, wherein the first pixel region includes first photoelectric conversion elements, and a first color filter on the first photoelectric conversion elements, the first color filter being one of white, green, and blue color filters, and wherein the second pixel region includes second photoelectric conversion elements, and a second color filter on the second photoelectric conversion elements, the second color filter being different from the first color filter and one of red and white color filters.

公开(公告)号：US20220328554A1

公开(公告)日：2022-10-13

申请号：US17539277

申请日：2021-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan hee LEE ,  Kyung Ho LEE ,  Seung Ki BAEK ,  Seung Ki JUNG ,  Tae Sub JUNG

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposing the first surface, a photodiode layer in the semiconductor substrate, a transfer gate on the photodiode layer, the transfer gate being on the first surface of the semiconductor substrate, a first trench recessed from the first surface of the semiconductor substrate at one side of the transfer gate, a first impurity injection region on at least a portion of a bottom surface of the first trench, the first impurity injection region not being on a sidewall of the first trench, and a lens on the second surface of the semiconductor substrate.

公开(公告)号：US20220013552A1

公开(公告)日：2022-01-13

申请号：US17318231

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ki BAEK ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Doo Sik SEOL ,  Seung Ki JUNG

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.