SEMICONDUCTOR DEVICE, LAYOUT DESIGN METHOD FOR THE SAME AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20220271133A1

    公开(公告)日:2022-08-25

    申请号:US17740829

    申请日:2022-05-10

    Abstract: A semiconductor device includes a first and second active pattern extending in a first direction on a substrate, a first and second gate electrode extending in a second direction to intersect the first and second active pattern, a first source/drain contact extending in the second direction and connected to a first and source/drain region of the first and second active patterns, respectively, a first source/drain via connected to the first source/drain contact, a first cell separation film extending in the second direction and crosses the first active pattern and the second active pattern, between the first source/drain contact and the second gate electrode, a first gate via connected to the second gate electrode and arranged with the first source/drain via along the first direction, and a first connection wiring which extending in the first direction and connects the first source/drain via and the first gate via.

    INTEGRATED CIRCUITS INCLUDING INTEGRATED STANDARD CELL STRUCTURE

    公开(公告)号:US20210167090A1

    公开(公告)日:2021-06-03

    申请号:US17027211

    申请日:2020-09-21

    Abstract: An integrated circuit includes a first standard cell including a first p-type transistor, a first n-type transistor, a first gate stack intersecting first and second active regions, first extended source/drain contacts on a first side of the first gate stack, a first normal source/drain contact on a second side of the first gate stack, a first gate via connected to the first gate stack, and a first source/drain via connected to the first normal source/drain contact, a second standard cell adjacent the first standard cell and including a second p-type transistor, a second n-type transistor, a second gate stack intersecting the first and second active regions, and a second gate via connected to the second gate stack, an input wiring connected to the first gate via, and an output wiring at a same level as the input wiring to connect the first source/drain via and the second gate via.

    SEMICONDUCTOR DEVICE, LAYOUT DESIGN METHOD FOR THE SAME AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20210104611A1

    公开(公告)日:2021-04-08

    申请号:US16857288

    申请日:2020-04-24

    Abstract: A semiconductor device includes a first and second active pattern extending in a first direction on a substrate, a first and second gate electrode extending in a second direction to intersect the first and second active pattern, a first source/drain contact extending in the second direction and connected to a first and source/drain region of the first and second active patterns, respectively, a first source/drain via connected to the first source/drain contact, a first cell separation film extending in the second direction and crosses the first active pattern and the second active pattern, between the first source/drain contact and the second gate electrode, a first gate via connected to the second gate electrode and arranged with the first source/drain via along the first direction, and a first connection wiring which extending in the first direction and connects the first source/drain via and the first gate via.

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