公开(公告)号：US20220271133A1

公开(公告)日：2022-08-25

申请号：US17740829

申请日：2022-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Su YU ,  Hyeon Gyu YOU ,  Seung Man LIM

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/40 ,  H01L29/78 ,  H01L23/522 ,  G06F30/392 ,  G06F30/3953 ,  H01L29/423 ,  H01L29/66 ,  H01L23/528

Abstract: A semiconductor device includes a first and second active pattern extending in a first direction on a substrate, a first and second gate electrode extending in a second direction to intersect the first and second active pattern, a first source/drain contact extending in the second direction and connected to a first and source/drain region of the first and second active patterns, respectively, a first source/drain via connected to the first source/drain contact, a first cell separation film extending in the second direction and crosses the first active pattern and the second active pattern, between the first source/drain contact and the second gate electrode, a first gate via connected to the second gate electrode and arranged with the first source/drain via along the first direction, and a first connection wiring which extending in the first direction and connects the first source/drain via and the first gate via.

公开(公告)号：US20230083727A1

公开(公告)日：2023-03-16

申请号：US17841747

申请日：2022-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo KIM ,  Seung Man LIM ,  Eun-Hee CHOI ,  Min su KIM ,  Sang Jin CHEONG

IPC: G06F30/3953 ,  G06F30/392

Abstract: An integrated circuit including: a first cell including first-a and second-a output pins, a first routing wire connecting the first-a output pin to the second-a output pin, a first-a via connecting the first-a output pin to the first routing wire, and a second-a via connecting the second-a output pin to the first routing wire; and a second cell including first-b and second-b output pins, a second routing wire connecting the first-b output pin to the second-b output pin, a first-b via connecting the first-b output pin to the second routing wire, and a second-b via connecting the second-b output pin to the second routing wire, wherein the first-a via is at a first-a position, the second-a via is at a second-a position, the first-b via is at a first-b position, the second-b via is at a second-b position different from each other.

公开(公告)号：US20210167090A1

公开(公告)日：2021-06-03

申请号：US17027211

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Su YU ,  Jae-Ho PARK ,  Sanghoon BAEK ,  Hyeon Gyu YOU ,  Seung Young LEE ,  Seung Man LIM

IPC: H01L27/118 ,  H01L27/02

Abstract: An integrated circuit includes a first standard cell including a first p-type transistor, a first n-type transistor, a first gate stack intersecting first and second active regions, first extended source/drain contacts on a first side of the first gate stack, a first normal source/drain contact on a second side of the first gate stack, a first gate via connected to the first gate stack, and a first source/drain via connected to the first normal source/drain contact, a second standard cell adjacent the first standard cell and including a second p-type transistor, a second n-type transistor, a second gate stack intersecting the first and second active regions, and a second gate via connected to the second gate stack, an input wiring connected to the first gate via, and an output wiring at a same level as the input wiring to connect the first source/drain via and the second gate via.

公开(公告)号：US20210104611A1

公开(公告)日：2021-04-08

申请号：US16857288

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Su YU ,  Hyeon Gyu YOU ,  Seung Man LIM

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  G06F30/392 ,  G06F30/3953 ,  H01L29/423

Abstract: A semiconductor device includes a first and second active pattern extending in a first direction on a substrate, a first and second gate electrode extending in a second direction to intersect the first and second active pattern, a first source/drain contact extending in the second direction and connected to a first and source/drain region of the first and second active patterns, respectively, a first source/drain via connected to the first source/drain contact, a first cell separation film extending in the second direction and crosses the first active pattern and the second active pattern, between the first source/drain contact and the second gate electrode, a first gate via connected to the second gate electrode and arranged with the first source/drain via along the first direction, and a first connection wiring which extending in the first direction and connects the first source/drain via and the first gate via.