公开(公告)号：US20190267246A1

公开(公告)日：2019-08-29

申请号：US16263759

申请日：2019-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： KeunHee BAI ,  Jongchul Park ,  Seungjun Kim ,  Seungju Park ,  Young-Ju Park ,  Hak-Sun Lee

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/308

Abstract: A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.

公开(公告)号：US10600653B2

公开(公告)日：2020-03-24

申请号：US16263759

申请日：2019-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： KeunHee Bai ,  Jongchul Park ,  Seungjun Kim ,  Seungju Park ,  Young-Ju Park ,  Hak-Sun Lee

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/3213

Abstract: A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.