公开(公告)号：US12222386B2

公开(公告)日：2025-02-11

申请号：US17899101

申请日：2022-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwangnae Gil ,  Seyoung Park ,  Sola Woo ,  Jonghyun Lee

IPC: G01R31/28 ,  G05B13/02

Abstract: Measurement data are produced by measuring characteristics of a semiconductor device. Target parameters are selected among a plurality of parameters of a device model where the device model is configured to perform a simulation based on device data and output simulation result data indicating the characteristics of the semiconductor device. Initial value sets corresponding to different combinations of initial values of the target parameters are selected. Local minimum values are determined based on reinforcement learning. Each local minimum value corresponds to a minimum value of a difference between the measurement data and the simulation result data with respect to each initial value set. Optimal values of the target parameters are determined based on the plurality of local minimum values. The device model capable of precisely predicting characteristics of the semiconductor device is generated by determining the parameters of the device model using the optimization scheme based on the reinforcement learning.