公开(公告)号：US20150035061A1

公开(公告)日：2015-02-05

申请号：US14262230

申请日：2014-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Seop Yoon ,  Hee-Soo Kang ,  Jong-Wook Lee ,  Soon Cho

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Provided are a multi-gate transistor device and a method for fabricating the same. The method for fabricating the multi-gate transistor device includes forming first and second fins shaped to protrude on a substrate and aligned and extending in a first direction and a trench separating the first and second fins from each other in the first direction between the first and second fins, performing ion implantation of impurities on sidewalls of the trench, forming a field dielectric film filling the trench, forming a recess in the first fin not exposing the field dielectric film, and growing an epitaxial layer in the recess.

Abstract translation: 提供一种多栅极晶体管器件及其制造方法。 制造多栅极晶体管器件的方法包括：形成第一和第二鳍片，其形状突出在基底上并且在第一方向上对准和延伸;以及沟槽，其将第一和第二鳍片沿着第一方向彼此分开， 第二鳍片，在沟槽的侧壁上执行杂质的离子注入，形成填充沟槽的场电介质膜，在第一鳍片中形成不露出场介电膜的凹槽，以及在凹槽中生长外延层。