公开(公告)号：US20230205970A1

公开(公告)日：2023-06-29

申请号：US17860225

申请日：2022-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sorang JEON ,  Sunghoon JANG

IPC: G06F30/398 ,  G06F30/392

CPC classification number: G06F30/398 ,  G06F30/392 ,  G06F2119/02

Abstract: A mask layout optical proximity correction (OPC) method includes determining a target pattern to be formed on a substrate, simulating a photomask layout based on the target pattern, applying a bias to the simulated photomask layout, thereby correcting the photomask layout into a first modeling layout, and selecting one of control parameters obtained through modeling using a layout of a split mask, thereby deforming the first modeling layout into a second modeling layout, and checking whether or not there is a mask rule check (MRC) violation, based on the second modeling layout.