公开(公告)号：US20200044669A1

公开(公告)日：2020-02-06

申请号：US16599648

申请日：2019-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Uhn CHA ,  Ye-Sin RYU ,  Young-Sik KIM ,  Su-Yeon DOO

IPC: H03M13/29 ,  H03M13/09

Abstract: An error detection code generation circuit of a semiconductor device includes a first cyclic redundancy check (CRC) engine, a second CRC engine and an output selection engine. The first CRC engine generates first error detection code bits using a first generation matrix, based on a plurality of first unit data and first DBI bits in response to a mode signal. The second CRC engine generates second error detection code bits using a second generation matrix, based on a plurality second unit data and second DBI bits, in response to the mode signal. The output selection engine generates final error detection code bits by merging the first error detection code bits and the second error detection code bits in response to the mode signal. The first generation matrix is the same as the second generation matrix.

公开(公告)号：US20170062038A1

公开(公告)日：2017-03-02

申请号：US15065211

申请日：2016-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-Yeon DOO ,  Tae-Young OH ,  Kwang-Il PARK

IPC: G11C11/406

CPC classification number: G06F13/1636 ,  G11C11/40603 ,  G11C11/40611 ,  G11C11/40615

Abstract: A memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a plurality of dynamic memory cells. The memory controller controls the semiconductor memory device. The memory controller applies an auto-refresh command to the semiconductor memory device at each refresh interval of the semiconductor memory device such that the semiconductor memory performs a refresh operation in a normal mode, and does not apply the auto-refresh command to the semiconductor memory device during a self-refresh interval in which the semiconductor memory performs a self-refresh operation. After the semiconductor memory device exits from the self-refresh interval, the memory controller adjusts an application of the auto-refresh command in the normal mode by reflecting information of the self-refresh interval.

Abstract translation: 存储器系统包括半导体存储器件和存储器控制器。 半导体存储器件包括多个动态存储单元。 存储器控制器控制半导体存储器件。 存储器控制器在半导体存储器件的每个刷新间隔处向半导体存储器件施加自动刷新命令，使得半导体存储器以正常模式执行刷新操作，并且不将自动刷新命令应用于半导体存储器 在自刷新间隔期间，半导体存储器执行自刷新操作。 在半导体存储器件退出自刷新间隔之后，存储器控制器通过反映自刷新间隔的信息来调整在正常模式下的自动刷新命令的应用。