公开(公告)号：US20220102336A1

公开(公告)日：2022-03-31

申请号：US17246108

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwe CHO ,  Subin JIN

IPC: H01L27/02 ,  H01L27/092 ,  H01L23/528 ,  G06F30/392

Abstract: An integrated circuit includes at least one decoupling cell, wherein the at least one decoupling cell includes at least one P-type decoupling MOSFET and at least one N-type decoupling MOSFET, and a number of the at least one P-type decoupling MOSFET is different from a number of the at least one N-type decoupling MOSFET.

公开(公告)号：US20210210479A1

公开(公告)日：2021-07-08

申请号：US17009941

申请日：2020-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounggon KANG ,  Subin JIN ,  Ha-Young KIM

IPC: H01L27/02 ,  H03K3/037 ,  H03K3/3562

Abstract: A semiconductor device includes a standard cell, which includes first to fourth active areas that are extended in a first direction, first to fourth gate lines that are extended in a second direction perpendicular to the first direction over the first to fourth active areas and are disposed parallel to each other, a first cutting layer that is disposed between the first active area and the second active area and separates the second and third gate lines, a second cutting layer that is disposed between the third active area and the fourth active area and separates the second and third gate lines, a first gate contact that is formed on the second gate line separated by the first cutting layer and the second cutting layer, and a second gate contact that is formed on the third gate line separated by the first cutting layer and the second cutting layer.