公开(公告)号：US20240272544A1

公开(公告)日：2024-08-15

申请号：US18417718

申请日：2024-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyoyeon KIM ,  Sukjong BAE ,  Kangho PARK ,  Yuri KIM

IPC: G03F1/70

CPC classification number: G03F1/70

Abstract: In a method of manufacturing a photomask, a layout of a target pattern to be formed in the photomask may be designed. A modeling of a displacement error of the target pattern may be performed and a displacement error correction map of the target pattern may be generated based on the modeling of the displacement error of the target pattern. An exposure process may be performed on a blank mask in reflection of the displacement error correction map of the target pattern. A developing process and an etching process may be performed on the blank mask to form the photomask.