公开(公告)号：US20230016186A1

公开(公告)日：2023-01-19

申请号：US17678392

申请日：2022-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Sung KANG ,  Hyoung Yol MUN ,  Jun U JIN ,  Bo Hyun KIM ,  Sung Dong CHO ,  Won Hee CHO

IPC: H01L23/00

Abstract: A semiconductor device includes a substrate. A conductive layer is disposed on the substrate and extends in a first direction. An insulating layer is disposed on the conductive layer and exposes at least a portion of the conductive layer through a via hole. The via hole includes a first face extending in a first slope relative to a top face of the conductive layer. A second face extends in a second slope relative to the top face of the conductive layer that is less than the first slope. A redistribution conductive layer includes a first pad area disposed in the via hole. A line area at least partially extends along the first face and the second face. The first face directly contacts the conductive layer. The second face is positioned at a higher level than the first face in a second direction perpendicular to a top face of the substrate.

公开(公告)号：US20220173016A1

公开(公告)日：2022-06-02

申请号：US17651456

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Wuk PARK ,  Sung Dong CHO ,  Eun Ji KIM ,  Hak Seung LEE ,  Dae Suk LEE ,  Dong Chan LIM ,  Sang Jun PARK

IPC: H01L23/48 ,  H01L21/48

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.