SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20220005811A1

    公开(公告)日:2022-01-06

    申请号:US17182315

    申请日:2021-02-23

    Abstract: A semiconductor device includes a plurality of first conductive patterns extending parallel in a first direction on a substrate, a plurality of second conductive patterns extending parallel in a second direction crossing the first direction on the substrate, a plurality of buried contacts connected to the substrate between the plurality of first conductive patterns and between the plurality of second conductive patterns, and a landing pad connected to each of the buried contacts on the plurality of buried contacts. The landing pad includes a first side surface extending in the first direction in plan view and a second side surface extending in a third direction in plan view. The third direction is different from the first direction and the second direction in plan view.

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