公开(公告)号：US20250022716A1

公开(公告)日：2025-01-16

申请号：US18650213

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Jung KIM ,  Sung Woo KIM ,  Hyun Seo SHIN ,  Min Jeong CHO ,  Min Su CHOI

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/311 ,  H01L29/66 ,  H10B12/00

Abstract: A method of fabricating a semiconductor device includes providing a substrate, forming a target film, a first mask film, a second mask film, and an upper mask pattern on the substrate, forming a first spacer pattern that includes a first line portion and a second line portion, and a folding portion that connects the first line portion and the second line portion, forming a slit mask pattern that partially covers the first spacer pattern, forming a first mask pattern by patterning the second mask film using the slit mask pattern and the first spacer pattern as an etching mask, forming a second spacer pattern, forming a second mask pattern by patterning the first mask film using the second spacer pattern as an etching mask, and forming a plurality of target patterns by patterning the target film using the second mask pattern as an etching mask.

公开(公告)号：US20220005811A1

公开(公告)日：2022-01-06

申请号：US17182315

申请日：2021-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Jung KIM ,  Hye Won KIM ,  Sung Yeon RYU

IPC: H01L27/108

Abstract: A semiconductor device includes a plurality of first conductive patterns extending parallel in a first direction on a substrate, a plurality of second conductive patterns extending parallel in a second direction crossing the first direction on the substrate, a plurality of buried contacts connected to the substrate between the plurality of first conductive patterns and between the plurality of second conductive patterns, and a landing pad connected to each of the buried contacts on the plurality of buried contacts. The landing pad includes a first side surface extending in the first direction in plan view and a second side surface extending in a third direction in plan view. The third direction is different from the first direction and the second direction in plan view.