公开(公告)号：US20190081174A1

公开(公告)日：2019-03-14

申请号：US16044584

申请日：2018-07-25

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JUNG-GUN YOU ,  Chang-Hee Kim ,  Sung-II Park ,  Dong-Hun Lee

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L23/532 ,  H01L21/308 ,  H01L21/8238

摘要： A vFET includes a first impurity region doped with first impurities at an upper portion of the substrate. A first diffusion control pattern is formed on the first impurity region. The first diffusion control pattern is configured to control the diffusion of the first impurities. A channel extends in a vertical direction substantially orthogonal to an upper surface of the substrate. A second impurity region is doped with second impurities on the channel. A second diffusion control pattern is between the channel and the second impurity region. The second diffusion control pattern is configured to control the diffusion of the second impurities. A gate structure is adjacent to the channel.

公开(公告)号：US20150327023A1

公开(公告)日：2015-11-12

申请号：US14706330

申请日：2015-05-07

申请人： Samsung Electronics Co., Ltd.

发明人： Seong-Hee PARK ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-II Park ,  Bong-Jhin Shin ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee ,  Tae-Young Lee

IPC分类号： H04W4/04 ,  H04W72/08 ,  H04W8/24

CPC分类号： H04W4/027 ,  H04L67/1095 ,  H04L67/148 ,  H04L67/16 ,  H04W4/023 ,  H04W4/029 ,  H04W8/245 ,  H04W72/08

摘要： The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. Disclosed is a method for operating a mobile terminal, including detecting a movement of the mobile terminal and generating a message requesting a second service device to play contents being played by a first service device, and when the second service device is available, sending at least one of the generated message, content information, connectivity information, and functionality information to at least one of the second service device and a contents source device which provides the contents.

摘要翻译： 本公开涉及传感器网络，机器类型通信（MTC），机器对机器（M2M）通信和物联网技术（IoT）。 本发明可以应用于智能家居，智能建筑，智能城市，智能汽车，连接车，医疗保健，数字教育，智能零售，安全和安全服务等上述技术的智能化服务。 公开了一种操作移动终端的方法，包括检测移动终端的移动并产生请求第二服务设备播放由第一服务设备播放的内容的消息，并且当第二服务设备可用时，至少发送 将生成的消息，内容信息，连接性信息和功能信息中的一个提供给提供内容的第二服务设备和内容源设备中的至少一个。

公开(公告)号：US20160043222A1

公开(公告)日：2016-02-11

申请号：US14667810

申请日：2015-03-25

申请人： Samsung Electronics Co., Ltd.

发明人： Keun-Hwi Cho ,  Sung-II Park ,  Byoung-Hak Hong ,  Toshinori Fukai ,  Mun-Hyeon Kim ,  Woong-Gi Kim ,  Sue-Hye Park ,  Dong-Won Kim ,  Dae-Won Ha

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423

CPC分类号： H01L29/7845 ,  H01L21/28123 ,  H01L21/82385 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/785

摘要： Provided is a semiconductor device to which a pattern structure for performance improvement is applied. The semiconductor device includes first and second active regions spaced apart from each other in a first direction with an isolation layer interposed therebetween, a first normal gate formed on the first active region to extend in a second direction crossing the first direction, a first dummy gate having a portion overlapping with one end of the isolation layer and the other portion overlapping with the first active region and spaced apart from the first normal gate in the first direction, a second dummy gate having a portion overlapping with the other end of the isolation layer and the other portion overlapping with the second active region, a first normal source/drain contact formed on a source/drain region between the first normal gate and the first dummy gate, and a dummy contact formed on the isolation layer so as not to overlap with the first and second dummy gates and having a different size from the first normal source/drain contact.

摘要翻译： 提供了一种应用了用于性能改进的图案结构的半导体器件。 所述半导体器件包括在第一方向上彼此间隔开的第一和第二有源区，隔着隔离层彼此隔开的第一正常栅极，形成在第一有源区上以沿与第一方向交叉的第二方向延伸的第一正常栅极，第一伪栅极 具有与所述隔离层的一端重叠的部分，并且所述另一部分与所述第一有源区域重叠并且在所述第一方向上与所述第一正常栅极间隔开，第二伪栅极具有与所述隔离层的另一端重叠的部分 并且另一部分与第二有源区重叠，形成在第一正常栅极和第一伪栅极之间的源极/漏极区域上的第一正常源极/漏极接触器和形成在隔离层上以使得不重叠的虚拟接触 与第一和第二伪栅极并且具有与第一正常源极/漏极接触件不同的尺寸。