公开(公告)号：US10735321B2

公开(公告)日：2020-08-04

申请号：US15995925

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong-Jhin Shin ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Seong-Hee Park ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee ,  Tae-Young Lee

IPC: H04L12/741 ,  H04L29/12 ,  H04L12/46

Abstract: A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge. The method further includes transmitting the address-converted first packet to a node of a second network.

公开(公告)号：US20200071822A1

公开(公告)日：2020-03-05

申请号：US16371327

申请日：2019-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Joo An ,  Jeon-Il Lee ,  Kaoru Yamamoto ,  Jang-Hee Lee ,  Kee-Young Jun ,  Geun-O Jeong

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32 ,  C23C16/50 ,  C23C16/46

Abstract: A semiconductor manufacturing, apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is co figured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

公开(公告)号：US20170164163A1

公开(公告)日：2017-06-08

申请号：US15325712

申请日：2015-07-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Tae-Young Lee ,  Kyung-Whoon Cheun ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-IL Park ,  Seong-Hee Park ,  Bong-Jhin Shin ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee

IPC: H04W4/08 ,  H04W8/00

Abstract: The present invention defines a share group, and enables a content generated during an activity period to be automatically shared in the share group during the activity period. According to an embodiment of the present invention, an automatic content share method comprises, in a content share method, the steps of: setting a share group to share the content, an activity and an activity period; and sharing the generated content on the basis of the share group to share the content, the activity and the activity period, wherein the share group is formed on the basis of a proximity discovery.

公开(公告)号：US11959170B2

公开(公告)日：2024-04-16

申请号：US17333820

申请日：2021-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Hyunjae Lee ,  Ik Soo Kim ,  Jang-Hee Lee

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  B01B1/00 ,  C23C14/24

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/4483 ,  H01L21/02175 ,  H01L21/0228 ,  B01B1/005 ,  C23C14/243 ,  C23C16/4485 ,  C23C16/45561

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

公开(公告)号：US11228376B2

公开(公告)日：2022-01-18

申请号：US16065977

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Hoon Han ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Hee-Su Kim ,  Seong-Hee Park ,  Chil-Youl Yang

IPC: H04W4/80 ,  H04B11/00 ,  H04W4/70 ,  H04L1/00

Abstract: Disclosed is a method by which a transmission device transmits data on the basis of a sound signal in a wireless communication system, the method including transmitting a sound packet corresponding to transmission data, with the sound packet including at least one sound symbol, the sound symbol including at least one sound sub-symbol, a plurality of sound symbol types are supported in the wireless communication system, and each of the plurality of sound symbol types is mapped to a preset data value.

公开(公告)号：US10790147B2

公开(公告)日：2020-09-29

申请号：US15960583

申请日：2018-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee Lee ,  Se-Ran Oh ,  Hyun-Su Kim ,  Ik-Soo Kim ,  Seong-Gil Park ,  Geun-O Jeong

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/3215

Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.

公开(公告)号：US09171781B2

公开(公告)日：2015-10-27

申请号：US14134043

申请日：2013-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee Lee ,  Jongmin Baek ,  Kyu-Hee Han ,  Gilheyun Choi ,  Jongwon Hong

IPC: H01L23/48 ,  H01L21/764 ,  H01L23/482 ,  H01L23/522 ,  H01L21/768 ,  H01L23/28

CPC classification number: H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/28 ,  H01L23/48 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

Abstract: Semiconductor devices, and methods of fabricating the same, include first conductive lines on a substrate, and a first molding layer covering the first conductive lines. The first conductive lines have air gaps between adjacent first conductive lines. Sidewalls of the first conductive lines and a bottom surface of the first molding layer collectively define a first gap region of each of the air gaps. The sidewalls of the first conductive lines and a top surface of the first molding layer collectively define a second air gap region of each of the air gaps.

Abstract translation: 半导体器件及其制造方法包括在基板上的第一导线和覆盖第一导线的第一成型层。 第一导线在相邻的第一导线之间具有气隙。 第一导电线的侧壁和第一模制层的底表面共同限定每个气隙的第一间隙区域。 第一导电线的侧壁和第一模制层的顶表面共同限定每个气隙的第二气隙区域。

公开(公告)号：US20150195198A1

公开(公告)日：2015-07-09

申请号：US14590774

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong-Jhin Shin ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Seong-Hee Park ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee ,  Tae-Young Lee

IPC: H04L12/741 ,  H04L29/12

CPC classification number: H04L45/74 ,  H04L12/4625 ,  H04L61/103 ,  H04L61/25 ,  H04L61/6009 ,  H04L61/6013 ,  H04L61/6022

Abstract: A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge. The method further includes transmitting the address-converted first packet to a node of a second network.

Abstract translation: 提供了一种在通信系统的桥中发送和接收分组的方法。 该方法包括从第一网络接收第一分组。 该方法还包括将接收到的第一分组的介质访问控制（MAC）层源地址转换为网桥的MAC地址。 该方法还包括将地址转换的第一分组发送到第二网络的节点。

公开(公告)号：US11270881B2

公开(公告)日：2022-03-08

申请号：US16385441

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaoru Yamamoto ,  Chang-Hyun Kim ,  Hyun-Jae Song ,  Keun-Wook Shin ,  Hyeon-Jin Shin ,  Sung-Joo An ,  Chang-Seok Lee ,  Kee-Young Jun ,  Geun-O Jeong ,  Jang-Hee Lee

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

公开(公告)号：US11047045B2

公开(公告)日：2021-06-29

申请号：US16030323

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Hyunjae Lee ,  Ik Soo Kim ,  Jang-Hee Lee

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/44 ,  C23C16/448 ,  C23C14/24 ,  B01B1/00

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.