公开(公告)号：US12272403B2

公开(公告)日：2025-04-08

申请号：US17955733

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Ho Son ,  Doo-Yeun Jung ,  Sung-Kwan Jung

IPC: G11C16/08 ,  G11C16/16 ,  G11C29/12 ,  G11C16/04

Abstract: An operating method of a memory device includes: acquiring an address of a first bad word line, the first bad word line included in a plurality of word lines of the memory device; detecting whether word lines adjacent to the first bad word line are bad based on the address of the first bad word line, the word lines adjacent to the first bad word line included in the plurality of word lines; designating a first word line among the word lines adjacent to the first bad word line as a prohibited word line, the first word line being detected as a second bad word line; and sending first data via a second word line among the word lines adjacent to the first bad word line, the second word line being detected as a normal word line.