公开(公告)号：US12272403B2

公开(公告)日：2025-04-08

申请号：US17955733

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Ho Son ,  Doo-Yeun Jung ,  Sung-Kwan Jung

IPC: G11C16/08 ,  G11C16/16 ,  G11C29/12 ,  G11C16/04

Abstract: An operating method of a memory device includes: acquiring an address of a first bad word line, the first bad word line included in a plurality of word lines of the memory device; detecting whether word lines adjacent to the first bad word line are bad based on the address of the first bad word line, the word lines adjacent to the first bad word line included in the plurality of word lines; designating a first word line among the word lines adjacent to the first bad word line as a prohibited word line, the first word line being detected as a second bad word line; and sending first data via a second word line among the word lines adjacent to the first bad word line, the second word line being detected as a normal word line.

公开(公告)号：US11527296B2

公开(公告)日：2022-12-13

申请号：US17232370

申请日：2021-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Yeun Jung ,  Young-Jin Cho ,  Bu-Il Nam ,  Nari Lee ,  Yeji Nam ,  Sangyong Yoon

IPC: G11C16/34 ,  G11C16/24 ,  G11C16/30 ,  G11C16/10 ,  G11C16/08 ,  G11C16/16

Abstract: An operation method of a nonvolatile memory device which includes a memory block having wordlines includes performing an erase on the memory block, performing a block verification on the memory block by using a 0-th erase verification voltage, performing a delta verification on the memory block by using a first erase verification voltage different from the 0-th erase verification voltage when a result of the block verification indicates a pass, and outputting information about an erase result of the memory block based on the result of the block verification or a result of the delta verification. The delta verification includes generating delta counting values respectively corresponding to wordline groups by using the first erase verification voltage, generating a delta value based on the delta counting values, and comparing the delta value and a first reference value.

公开(公告)号：US11817158B2

公开(公告)日：2023-11-14

申请号：US18079433

申请日：2022-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Yeun Jung ,  Young-Jin Cho ,  Bu-Il Nam ,  Nari Lee ,  Yeji Nam ,  Sangyong Yoon

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/30 ,  G11C16/24 ,  G11C16/10 ,  G11C16/16

CPC classification number: G11C16/3459 ,  G11C16/08 ,  G11C16/102 ,  G11C16/16 ,  G11C16/24 ,  G11C16/30

Abstract: An operation method of a nonvolatile memory device which includes a memory block having wordlines includes performing an erase on the memory block, performing a block verification on the memory block by using a 0-th erase verification voltage, performing a delta verification on the memory block by using a first erase verification voltage different from the 0-th erase verification voltage when a result of the block verification indicates a pass, and outputting information about an erase result of the memory block based on the result of the block verification or a result of the delta verification. The delta verification includes generating delta counting values respectively corresponding to wordline groups by using the first erase verification voltage, generating a delta value based on the delta counting values, and comparing the delta value and a first reference value.