公开(公告)号：US11049846B2

公开(公告)日：2021-06-29

申请号：US16548406

申请日：2019-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-hee Uh ,  Sung-min Kang ,  Jun-gu Kang ,  Seung-hee Go ,  Young-mok Kim

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L21/768 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  G09G3/20

Abstract: An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.

公开(公告)号：US11569206B2

公开(公告)日：2023-01-31

申请号：US17338630

申请日：2021-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-hee Uh ,  Sung-min Kang ,  Jun-gu Kang ,  Seung-hee Go ,  Young-mok Kim

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L21/768 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  G09G3/20

Abstract: An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.