公开(公告)号：US20170084427A1

公开(公告)日：2017-03-23

申请号：US15179389

申请日：2016-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hwan UM ,  Sung-moon PARK ,  Dong-wook KIM

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3266

Abstract: A plasma process apparatus including a process chamber defined by an outer wall and a dielectric window, the dielectric window including a first dielectric material and covering an upper portion of the outer wall, the dielectric window including a top surface facing outside of the process chamber and a bottom surface facing insider of the process chamber, the dielectric window further including at least one magnetic-field control groove at the top surface of the dielectric window, and a coil antenna over the dielectric window and configured to receive RF power, the coil antenna including an inner coil and an outer coil, the inner coil over a center of the dielectric window, the outer coil over an edge of the dielectric window and surrounding the inner coil may be provided.