-
公开(公告)号：US20180122619A1
公开(公告)日：2018-05-03
申请号：US15836388
申请日：2017-12-08
发明人： Sae Hoon Uhm , Yun Seong Lee
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32155 , H01J37/32174 , H05H1/30 , H05H1/46 , H05H2001/4667
摘要： An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.
-
公开(公告)号：US20180096818A1
公开(公告)日：2018-04-05
申请号：US15285176
申请日：2016-10-04
发明人： Dmitry Lubomirsky
IPC分类号： H01J37/305 , H01J37/30
CPC分类号： H01J37/3053 , H01J37/3002 , H01J37/3178 , H01J37/321 , H01J37/32119 , H01J37/3244 , H01J2229/882 , H01L21/3065
摘要： Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.
-
公开(公告)号：US09934942B1
公开(公告)日：2018-04-03
申请号：US15285176
申请日：2016-10-04
发明人： Dmitry Lubomirsky
IPC分类号： H01J37/32 , H05H1/30 , H01L21/30 , H01J37/305 , H01J37/30 , H01L21/3065
CPC分类号： H01J37/3053 , H01J37/3002 , H01J37/3178 , H01J37/321 , H01J37/32119 , H01J37/3244 , H01J2229/882 , H01L21/3065
摘要： Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.
-
公开(公告)号：US20180082821A1
公开(公告)日：2018-03-22
申请号：US15445027
申请日：2017-02-28
发明人： Norihiko IKEDA , Naoki YASUI
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32119 , H01J37/32183 , H01J37/32669 , H01J2237/3341
摘要： A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.
-
公开(公告)号：US20170365444A1
公开(公告)日：2017-12-21
申请号：US15415403
申请日：2017-01-25
发明人： Hak Young Kim , Jung Pyo Hong , Jong Woo Sun , Doug Yong Sung , Yong Ho Lim , Yun Kwang Jeon , Hwa Jun Jung
CPC分类号： H01J37/3244 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32458 , H01J2237/334 , H01L21/67069
摘要： A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.
-
公开(公告)号：US20170062245A1
公开(公告)日：2017-03-02
申请号：US15142629
申请日：2016-04-29
发明人： Jung-Pyo Hong , Kwang-Nam KIM , Sang-Dong KWON , Jong-Woo SUN , Sang-Rok OH , Yong-Moon JANG
CPC分类号： H01J37/32715 , H01J37/32009 , H01J37/321 , H01J37/32119 , H01L21/67248
摘要： Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.
摘要翻译： 提供了包括温度测量单元的衬底处理设备。 基板处理装置包括：室，包括基板处理区域，设置在基板处理区域上并且包括插入孔的电介质片和设置在电介质片上以测量电介质片材的温度的温度测量单元， 并且具有插入到所述插入孔中的螺纹部分，其中所述插入孔和所述螺纹部分中的每一个具有彼此啮合的螺纹螺旋。
-
7.发明申请GAS PLENUM ARRANGEMENT FOR IMPROVING ETCH NON-UNIFORMITY IN TRANSFORMER-COUPLED PLASMA SYSTEMS 审中-公开用于改善变压器耦合等离子体系统中非均匀性的气体排放方案公开(公告)号：US20170032931A1
公开(公告)日：2017-02-02
申请号：US15291468
申请日：2016-10-12
发明人： Tom KAMP , Arthur H. SATO , Alex PATERSON
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/3244 , H01J2237/334 , H01L21/3065 , H01L21/67069
摘要： A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.
摘要翻译： 用于衬底处理系统的气体增压室装置包括设置成在线圈和处理室之间限定气体增压室的气体增压室。 线圈布置在气室的外边缘的外侧。 多个通量衰减部分设置在气体增压室的外边缘的外侧。 磁通衰减部分与线圈重叠。
-
公开(公告)号：US20170009338A1
公开(公告)日：2017-01-12
申请号：US15117804
申请日：2015-02-23
发明人： Takehisa SAITO , Takenao NEMOTO , Koji YAMAGISHI , Hiroshi KANEKO
IPC分类号： C23C16/34 , H01L43/12 , H01J37/32 , C23C16/44 , C23C16/455
CPC分类号： C23C16/345 , C23C16/4412 , C23C16/45523 , C23C16/45529 , C23C16/45536 , C23C16/45548 , C23C16/45561 , C23C16/511 , H01J37/32119 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01J2237/3321 , H01L21/0217 , H01L21/02274 , H01L43/12
摘要： A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.
摘要翻译： 一种用于交替地执行使用第一和第二处理气体的第一等离子体处理步骤的等离子体处理装置和使用第三和第四处理气体的第二等离子体处理步骤 该装置包括：处理容器，其在天花板中具有介电窗口并可移除地容纳工件; 排气单元，其排出处理容器; 处理气体供应单元，其将第一，第二，第三和第四处理气体供应到处理容器中; 第一气体导入单元，包括顶板气体注入口，电介质窗口气体流路和第一外部气体流路; 第二气体引入单元，包括侧壁气体注入口，侧壁气体流路和第二外部气体流路; 向所述等离子体产生空间供给电磁波的电磁波供给部; 旁路排气通道; 和开闭阀。
-
公开(公告)号：US09543121B2
公开(公告)日：2017-01-10
申请号：US13451867
申请日：2012-04-20
申请人： Kazuo Sasaki , Toshihiro Tojo
发明人： Kazuo Sasaki , Toshihiro Tojo
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/32119
摘要： An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction.
摘要翻译： 电感耦合等离子体处理装置通过在处理室中的等离子体产生区域中产生电感耦合等离子体，在衬底上进行等离子体处理。 该装置包括用于在等离子体产生区域中产生电感耦合等离子体的高频天线和设置在等离子体产生区域和高频天线之间的金属窗口。 金属窗首先通过沿着金属窗的圆周方向的线彼此电绝缘的两个或更多个部分，然后通过沿着与周边方向交叉的方向的线彼此电绝缘。
-
公开(公告)号：US20160240402A1
公开(公告)日：2016-08-18
申请号：US15139243
申请日：2016-04-26
发明人： Soonam Park , Yufei Zhu , Edwin C. Suarez , Nitin K. Ingle , Dmitry Lubomirsky , Jiayin Huang
IPC分类号： H01L21/67 , H01J37/32 , C23C16/455 , C23C16/50
CPC分类号： H01J37/32972 , C23C16/455 , C23C16/45536 , C23C16/45559 , C23C16/50 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32119 , H01J37/32357 , H01J37/3244 , H01J37/32532 , H01J37/3255 , H01J37/32623 , H01J2237/334 , H01L21/31116 , H01L21/32137 , H01L21/67069 , H01L21/67253 , H01L22/26
摘要： A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.
-
-
-
-
-
-
-
-
-
搜索结果
143 条记录 (耗时 0.029 秒)