公开(公告)号：US20150309411A1

公开(公告)日：2015-10-29

申请号：US14679054

申请日：2015-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-wook HWANG ,  Soon-mok HA ,  Joon-soo PARK

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/0035

Abstract: Methods of forming a pattern are provided. The methods may include forming a dual tone photoresist layer on a support layer, forming a low light exposure region, a middle light exposure region, and a high light exposure region in a first region of the dual tone photoresist layer and forming a low light exposure region and a middle light exposure region in a second region of the dual tone photoresist layer by exposing the dual tone photoresist layer to light by using a mask comprising a gray feature. The method may also include forming preliminary patterns in the first region by performing a positive development process and forming first patterns which are spaced apart from one another in the first region and second patterns which are spaced apart from one another in the second region by performing a negative development process.

Abstract translation: 提供形成图案的方法。 所述方法可以包括在双层光致抗蚀剂层的第一区域中在支撑层上形成双色光致抗蚀剂层，形成低曝光区域，中间曝光区域和高曝光区域，并形成低光照 区域和中间曝光区域，通过使用包括灰色特征的掩模将双色光致抗蚀剂层暴露于光下，在双色调光致抗蚀剂层的第二区域中。 该方法还可以包括通过执行正显影处理并形成在第一区域中彼此间隔开的第一图案和在第二区域中彼此间隔开的第二图案，在第一区域中形成初步图案， 负面发展过程。