公开(公告)号：US20240107195A1

公开(公告)日：2024-03-28

申请号：US18240483

申请日：2023-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heesung Shim ,  Seungsik Kim ,  Jaekyu Lee ,  Seunghyun Lim ,  Sungjae Jun

IPC: H04N25/771 ,  H04N23/667 ,  H04N25/531 ,  H04N25/532

CPC classification number: H04N25/771 ,  H04N23/667 ,  H04N25/531 ,  H04N25/532

Abstract: An image sensor comprising a pixel array in which a plurality of pixels are arranged and a row driver . Each of the pixel includes a photodiode, a transfer transistor for transferring photocharges of the photodiode to a floating diffusion node (FD), a conversion gain control transistor, a first source follower for amplifying and outputting the voltage of the FD to a first node, a precharge selection transistor connected between the first node and a second node, a first capacitor, a first sampling transistor connected between the second node and the first capacitor, a second capacitor, a second sampling transistor connected between the second node and the second capacitor, a second source follower for amplifying a voltage of the second node, a first selection transistor connected between the second source follower and a column line, and a second selection transistor connected between the first node and the column line.